Procedure of calculating parameters of sense amplifiers for the EEPROM and flash memory.
Saved in:
| Title: | Procedure of calculating parameters of sense amplifiers for the EEPROM and flash memory. |
|---|---|
| Authors: | Vasil'ev, E.1 vaseugser@mail.ru |
| Source: | Russian Microelectronics. Dec2013, Vol. 42 Issue 7, p414-419. 6p. |
| Subjects: | Erasable programmable read-only memory, Electronic amplifiers design & construction, Parameters (Statistics), Flash memory, Temperature effect, Electric potential, Complementary metal oxide semiconductors, Nonvolatile memory |
| Abstract: | Designs of sense amplifiers for the EEPROM and flash memory are considered and their classification and analysis are performed. The variant of the design of the sense amplifier with the best overall parameters in terms of sensitivity; speed of response; and stability against interference, variation in temperature, and supply voltage is selected. The procedure for calculating the parameters of the selected sense amplifier is developed and the results of modeling the amplifier for CMOS 0.18-μm technology are presented. [ABSTRACT FROM AUTHOR] |
| Copyright of Russian Microelectronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 91843185 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Procedure of calculating parameters of sense amplifiers for the EEPROM and flash memory. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Vasil'ev%2C+E%2E%22">Vasil'ev, E.</searchLink><relatesTo>1</relatesTo><i> vaseugser@mail.ru</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Russian+Microelectronics%22">Russian Microelectronics</searchLink>. Dec2013, Vol. 42 Issue 7, p414-419. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Erasable+programmable+read-only+memory%22">Erasable programmable read-only memory</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+amplifiers+design+%26+construction%22">Electronic amplifiers design & construction</searchLink><br /><searchLink fieldCode="DE" term="%22Parameters+%28Statistics%29%22">Parameters (Statistics)</searchLink><br /><searchLink fieldCode="DE" term="%22Flash+memory%22">Flash memory</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Nonvolatile+memory%22">Nonvolatile memory</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Designs of sense amplifiers for the EEPROM and flash memory are considered and their classification and analysis are performed. The variant of the design of the sense amplifier with the best overall parameters in terms of sensitivity; speed of response; and stability against interference, variation in temperature, and supply voltage is selected. The procedure for calculating the parameters of the selected sense amplifier is developed and the results of modeling the amplifier for CMOS 0.18-μm technology are presented. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Russian Microelectronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=91843185 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S1063739713070111 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 414 Subjects: – SubjectFull: Erasable programmable read-only memory Type: general – SubjectFull: Electronic amplifiers design & construction Type: general – SubjectFull: Parameters (Statistics) Type: general – SubjectFull: Flash memory Type: general – SubjectFull: Temperature effect Type: general – SubjectFull: Electric potential Type: general – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Nonvolatile memory Type: general Titles: – TitleFull: Procedure of calculating parameters of sense amplifiers for the EEPROM and flash memory. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Vasil'ev, E. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2013 Type: published Y: 2013 Identifiers: – Type: issn-print Value: 10637397 Numbering: – Type: volume Value: 42 – Type: issue Value: 7 Titles: – TitleFull: Russian Microelectronics Type: main |
| ResultId | 1 |
