View in EDS

A 0.18μm CMOS low-power radiation sensor for asynchronous event-driven UWB wireless transmission.

Saved in:

Bibliographic Details
Title:	A 0.18μm CMOS low-power radiation sensor for asynchronous event-driven UWB wireless transmission.
Authors:	Bastianini, S.¹, Crepaldi, M.², Demarchi, D.^2,3, Gabrielli, A.^4,5 alessandro.gabrielli@bo.infn.it, Lolli, M.⁴, Margotti, A.⁴, Villani, G.⁶, Zhang, Z.⁶, Zoccoli, G.¹
Source:	Nuclear Instruments & Methods in Physics Research Section A. Dec2013, Vol. 730, p105-110. 6p.
Subjects:	Complementary metal oxide semiconductors, Radiation damage, Semiconductor detectors, Wireless communications, Ultra-wideband antennas, Fabrication (Manufacturing), Particles (Nuclear physics)
Abstract:	Abstract: The paper describes the design of a readout element, proposed as a radiation monitor, which implements an embedded sensor based on a floating-gate transistor. The paper shows the design of a microelectronic circuit composed of a sensor, an oscillator, a modulator, a transmitter and an integrated antenna. A prototype chip has recently been fabricated and tested exploiting a commercial 180nm, four metal CMOS technology. Simulation results of the entire behavior of the circuit before submission are presented along with some measurements of the actual chip response. In addition, preliminary tests of the performance of the Ultra-Wide Band transmission via the integrated antenna are summarized. As the complete chip prototype area is less than 1mm2, the chip fits a large variety of applications, from spot radiation monitoring systems in medicine to punctual measurements of radiation level in High-Energy Physics experiments. A sensitivity of 1mV/rad was estimated within an absorbed dose range up to 10krad and a total power consumption of about 165 μW. [Copyright &y& Elsevier]
	Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database:	Engineering Source

Description
Abstract:	Abstract: The paper describes the design of a readout element, proposed as a radiation monitor, which implements an embedded sensor based on a floating-gate transistor. The paper shows the design of a microelectronic circuit composed of a sensor, an oscillator, a modulator, a transmitter and an integrated antenna. A prototype chip has recently been fabricated and tested exploiting a commercial 180nm, four metal CMOS technology. Simulation results of the entire behavior of the circuit before submission are presented along with some measurements of the actual chip response. In addition, preliminary tests of the performance of the Ultra-Wide Band transmission via the integrated antenna are summarized. As the complete chip prototype area is less than 1mm2, the chip fits a large variety of applications, from spot radiation monitoring systems in medicine to punctual measurements of radiation level in High-Energy Physics experiments. A sensitivity of 1mV/rad was estimated within an absorbed dose range up to 10krad and a total power consumption of about 165 μW. [Copyright &y& Elsevier]
ISSN:	01689002
DOI:	10.1016/j.nima.2013.05.008