Bibliographic Details
| Title: |
Half-MOS Based Single-Poly EEPROM Cell With Program and Erase Bit Granularity. |
| Authors: |
Torricelli, Fabrizio1, Milani, Luca1, Colalongo, Luigi1, Richelli, Anna1, Kovacs-Vajna, Zsolt Miklos1 |
| Source: |
IEEE Electron Device Letters. Dec2013, Vol. 34 Issue 12, p1509-1511. 3p. |
| Subjects: |
Flash memory, Erasable programmable read-only memory, Complementary metal oxide semiconductors, Computer programming, Threshold voltage, Information technology research |
| Abstract: |
A single-poly electrically erasable programmable ROM (EEPROM) cell compatible with standard CMOS process is proposed. With respect to the classical embedded NOR cell, it can be programmed and erased by Fowler–Nordheim tunneling with single-bit granularity. The memory cell is based on a novel writing-inhibition scheme enabled by the combination of the body effect with multiple half-MOS devices. Experimental results on programming, erasing, inhibition, reading, and cycling endurance are provided using a 0.13 \mum standard CMOS process. [ABSTRACT FROM PUBLISHER] |
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| Database: |
Engineering Source |
