View in EDS

Heat treatment of 6H-SiC under different gaseous environments.

Saved in:
Bibliographic Details
Title: Heat treatment of 6H-SiC under different gaseous environments.
Authors: Lee, Woo Jin1 WooJin.Lee@csiro.au, Li, Chaoen1, Burke, Nick1, Patel, Jim1, Wilson, Merrill2, Gerdes, Karl3
Source: Ceramics International. Apr2014, Vol. 40 Issue 3, p4149-4154. 6p.
Subjects: Silicon carbide, Heat treatment of metals, Chemical processes, Mass transfer, Metallic surfaces
Abstract: Abstract: Silicon carbide is a useful material for the reactors in chemical processes. In recent years, microreactors have gained significant attentions due to the high demand for process miniaturization. As heat and mass-transfer are highly improved inside the gas flow channels in microreactors, any change on the surface of inner channels under heating becomes critical to the performance of microreactors. To investigate the surface changes of silicon carbide during the heat treatment, 6H-SiC coupons were processed in five different gases—Ar, N2, air, 0.9% O2 in Ar and 50% H2O in air—that are commonly encountered in high temperature chemical processes. While the formation of oxide film was found to be dependent on the partial pressure of oxidizing gas, surface decomposition was found from the treatment in nitrogen environment. Characterization of the SiC surface by Raman spectroscopy and SEM–EDX revealed that a graphitic layer has formed at the oxide film/SiC interface. Crystallinity of graphitic layer at the interface seemed to be dependent on the partial pressure of oxidizing gas, which was revealed by the relationship between G peak position and R(I D/I G). The intensity ratio of FTO(0)/FTO(2/6) bands showed that stacking faults on the surface of SiC coupons were reduced after heat treatment. [Copyright &y& Elsevier]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:Abstract: Silicon carbide is a useful material for the reactors in chemical processes. In recent years, microreactors have gained significant attentions due to the high demand for process miniaturization. As heat and mass-transfer are highly improved inside the gas flow channels in microreactors, any change on the surface of inner channels under heating becomes critical to the performance of microreactors. To investigate the surface changes of silicon carbide during the heat treatment, 6H-SiC coupons were processed in five different gases—Ar, N2, air, 0.9% O2 in Ar and 50% H2O in air—that are commonly encountered in high temperature chemical processes. While the formation of oxide film was found to be dependent on the partial pressure of oxidizing gas, surface decomposition was found from the treatment in nitrogen environment. Characterization of the SiC surface by Raman spectroscopy and SEM–EDX revealed that a graphitic layer has formed at the oxide film/SiC interface. Crystallinity of graphitic layer at the interface seemed to be dependent on the partial pressure of oxidizing gas, which was revealed by the relationship between G peak position and R(I D/I G). The intensity ratio of FTO(0)/FTO(2/6) bands showed that stacking faults on the surface of SiC coupons were reduced after heat treatment. [Copyright &y& Elsevier]
ISSN:02728842
DOI:10.1016/j.ceramint.2013.08.071