Bibliographic Details
| Title: |
Selectivity enhancement of SiC-FET gas sensors by combining temperature and gate bias cycled operation using multivariate statistics. |
| Authors: |
Bur, Christian1,2 c.bur@LMT.uni-saarland.de, Bastuck, Manuel1 m.batuck@lmt.uni-saarland.de, Lloyd Spetz, Anita2 spetz@ifm.liu.se, Andersson, Mike2 mikan@ifm.liu.se, Schütze, Andreas1 schuetze@lmt.uni-saarland.de |
| Source: |
Sensors & Actuators B: Chemical. Mar2014, Vol. 193, p931-940. 10p. |
| Subjects: |
Silicon carbide, Field-effect transistors, Gas detectors, Temperature effect, Ammonia, Multivariate analysis, Discriminant analysis |
| Abstract: |
Highlights: [•] Combination of temperature and gate bias modulation is presented. [•] Significant features describing the shape of the sensor response have been selected. [•] Linear Discriminant Analysis (LDA) is used for data evaluation. [•] Selectivity of the sensor can be increased by our suggested approach. [•] Discrimination of CO, NO2 and NH3 independent of the concentration is possible. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
