Bibliographic Details
| Title: |
A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells. |
| Authors: |
Soumyadeep Misra1, Linwei Yu1,2, Wanghua Chen1, Martin Foldyna1, Pere Roca i Cabarrocas1 pere.roca@polytechnique.edu |
| Source: |
Journal of Physics D: Applied Physics. 10/1/2014, Vol. 47 Issue 39, p1-1. 1p. |
| Subjects: |
Silicon nanowires synthesis, Solar cell manufacturing, Hydrogenated amorphous silicon, Photovoltaic power generation, Plasma-enhanced chemical vapor deposition |
| Abstract: |
Incorporation of nanostructures is a recent trend in the photovoltaic community, aimed at improving light absorption and consequently cell efficiency. In this regard, semiconductor nanowires provide an attractive research platform for a new generation of cost-effective and efficient solar cells. Thanks to their unique geometry, silicon nanowires enhance light trapping and anti-reflection effects by means of multiple scattering between individual nanowires, and by coupling the light into confined eigenmodes over a broad range of the solar spectrum. Moreover, radial junction solar cells built around nanowires decouple the light absorption and carrier collection directions, which allows for a higher internal field and better carrier collection. Thus, arrays of radial junction solar cells bring advantages of high efficiency with reduced material amount. This is particularly attractive for devices based on hydrogenated amorphous and microcrystalline silicon thin films. In this paper, after reviewing different approaches to fabricate silicon nanowires, we focus on nanowires grown using the plasma-assisted vapour–liquid–solid method because of the simplicity and compatibility with current silicon thin-film technology. Their application to a-Si : H based radial junction solar cells has already resulted in ∼8% of stable devices with an absorber layer thickness of only 100 nm. Moreover, current challenges and perspectives such as the use of a microcrystalline silicon absorber are also reviewed. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Physics D: Applied Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| Database: |
Engineering Source |