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Effect of N2/Ar flow ratio on the structural and electrical properties of SrHfON thin films prepared by magnetron sputtering.

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Title: Effect of N2/Ar flow ratio on the structural and electrical properties of SrHfON thin films prepared by magnetron sputtering.
Authors: Tian, Hao1, Feng, Li-ping1 lpfeng@nwpu.edu.cn, Liu, Zheng-tang1
Source: Vacuum. Nov2014, Vol. 109, p139-143. 5p.
Subjects: Magnetron sputtering, Thin films, Radio frequency, X-ray spectroscopy, Crystallization, Permittivity
Abstract: SrHfON thin films were prepared by radio frequency (RF) magnetron reactive co-sputtering under various N 2 /Ar flow ratio in the range from 0.20 to 0.50. The effect of N 2 /Ar flow ratio on the deposition rate, composition, structure and electrical properties of the sputtered SrHfON films has been investigated using X-ray spectroscopy (XPS), grazing incidence X-ray diffraction (GI-XRD), leakage current density–voltage (J-V) and capacitance–voltage (C–V) measurements. The results show that the properties of the SrHfON films were greatly affected by the N 2 /Ar flow ratio. The deposition rate of the SrHfON films was found to decrease with the increasing N 2 /Ar flow ratio. The SrHfON films exhibited local crystallization when the N 2 /Ar flow ratio is low (<0.33) while the SrHfON films were amorphous when the N 2 /Ar flow ratio is high (>0.33). The average leakage current density of the SrHfON films decreases initially and then increases with the increasing N 2 /Ar flow ratio. Contrarily, the dielectric constant ( k ) of the SrHfON films increases firstly and then decrease with the increasing N 2 /Ar flow ratio. Moreover, both the flat-band voltage shift and fixed positive charge densities were decreased initially and then increased with the increase of N 2 /Ar flow ratio. [ABSTRACT FROM AUTHOR]
Copyright of Vacuum is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 98140339
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  Data: Effect of N2/Ar flow ratio on the structural and electrical properties of SrHfON thin films prepared by magnetron sputtering.
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  Data: &lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Magnetron+sputtering%22&quot;&gt;Magnetron sputtering&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Thin+films%22&quot;&gt;Thin films&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Radio+frequency%22&quot;&gt;Radio frequency&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22X-ray+spectroscopy%22&quot;&gt;X-ray spectroscopy&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Crystallization%22&quot;&gt;Crystallization&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Permittivity%22&quot;&gt;Permittivity&lt;/searchLink&gt;
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  Data: SrHfON thin films were prepared by radio frequency (RF) magnetron reactive co-sputtering under various N 2 /Ar flow ratio in the range from 0.20 to 0.50. The effect of N 2 /Ar flow ratio on the deposition rate, composition, structure and electrical properties of the sputtered SrHfON films has been investigated using X-ray spectroscopy (XPS), grazing incidence X-ray diffraction (GI-XRD), leakage current density–voltage (J-V) and capacitance–voltage (C–V) measurements. The results show that the properties of the SrHfON films were greatly affected by the N 2 /Ar flow ratio. The deposition rate of the SrHfON films was found to decrease with the increasing N 2 /Ar flow ratio. The SrHfON films exhibited local crystallization when the N 2 /Ar flow ratio is low (&lt;0.33) while the SrHfON films were amorphous when the N 2 /Ar flow ratio is high (&gt;0.33). The average leakage current density of the SrHfON films decreases initially and then increases with the increasing N 2 /Ar flow ratio. Contrarily, the dielectric constant ( k ) of the SrHfON films increases firstly and then decrease with the increasing N 2 /Ar flow ratio. Moreover, both the flat-band voltage shift and fixed positive charge densities were decreased initially and then increased with the increase of N 2 /Ar flow ratio. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: &lt;i&gt;Copyright of Vacuum is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.vacuum.2014.07.005
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 139
    Subjects:
      – SubjectFull: Magnetron sputtering
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Radio frequency
        Type: general
      – SubjectFull: X-ray spectroscopy
        Type: general
      – SubjectFull: Crystallization
        Type: general
      – SubjectFull: Permittivity
        Type: general
    Titles:
      – TitleFull: Effect of N2/Ar flow ratio on the structural and electrical properties of SrHfON thin films prepared by magnetron sputtering.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Tian, Hao
      – PersonEntity:
          Name:
            NameFull: Feng, Li-ping
      – PersonEntity:
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            NameFull: Liu, Zheng-tang
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          Dates:
            – D: 01
              M: 11
              Text: Nov2014
              Type: published
              Y: 2014
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              Value: 0042207X
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              Value: 109
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            – TitleFull: Vacuum
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