Bibliographic Details
| Title: |
Rectifying diode made of individual gallium nitride nanowire |
| Authors: |
Kim, Jae-Ryoung1, Oh, Hwangyou1, So, Hye Mi1, Kim, Jinhee2, Kim, Ju-Jin1 jujinkim@moak.chonbuk.ac.kr |
| Source: |
Physica E. May2003, Vol. 18 Issue 1-3, p225. 2p. |
| Subjects: |
Nanowires, Schottky barrier diodes |
| Abstract: |
We have fabricated a Schottky-junction diode, utilizing gallium nitride (GaN) nanowire, and studied its electrical transport properties. Two kinds of metal electrodes, Al and Ti/Au, were incorporated into an individual GaN nanowire synthesized by chemical vapor deposition method. A Schottky-barrier junction was formed in the Al electrode while ohmic contact was formed in the Ti/Au electrode. The measured current–voltage characteristic exhibited clear rectifying behavior and no reverse bias breakdown was observed up to the measured voltage, −5 V. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
