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Rectifying diode made of individual gallium nitride nanowire

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Title: Rectifying diode made of individual gallium nitride nanowire
Authors: Kim, Jae-Ryoung1, Oh, Hwangyou1, So, Hye Mi1, Kim, Jinhee2, Kim, Ju-Jin1 jujinkim@moak.chonbuk.ac.kr
Source: Physica E. May2003, Vol. 18 Issue 1-3, p225. 2p.
Subjects: Nanowires, Schottky barrier diodes
Abstract: We have fabricated a Schottky-junction diode, utilizing gallium nitride (GaN) nanowire, and studied its electrical transport properties. Two kinds of metal electrodes, Al and Ti/Au, were incorporated into an individual GaN nanowire synthesized by chemical vapor deposition method. A Schottky-barrier junction was formed in the Al electrode while ohmic contact was formed in the Ti/Au electrode. The measured current–voltage characteristic exhibited clear rectifying behavior and no reverse bias breakdown was observed up to the measured voltage, −5 V. [Copyright &y& Elsevier]
Copyright of Physica E is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 9858704
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Rectifying diode made of individual gallium nitride nanowire
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  Data: <searchLink fieldCode="AR" term="%22Kim%2C+Jae-Ryoung%22">Kim, Jae-Ryoung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Oh%2C+Hwangyou%22">Oh, Hwangyou</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22So%2C+Hye+Mi%22">So, Hye Mi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kim%2C+Jinhee%22">Kim, Jinhee</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kim%2C+Ju-Jin%22">Kim, Ju-Jin</searchLink><relatesTo>1</relatesTo><i> jujinkim@moak.chonbuk.ac.kr</i>
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– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We have fabricated a Schottky-junction diode, utilizing gallium nitride (GaN) nanowire, and studied its electrical transport properties. Two kinds of metal electrodes, Al and Ti/Au, were incorporated into an individual GaN nanowire synthesized by chemical vapor deposition method. A Schottky-barrier junction was formed in the Al electrode while ohmic contact was formed in the Ti/Au electrode. The measured current–voltage characteristic exhibited clear rectifying behavior and no reverse bias breakdown was observed up to the measured voltage, <f>−5 V</f>. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Physica E is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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        Value: 10.1016/S1386-9477(02)00979-7
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      – Code: eng
        Text: English
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      – SubjectFull: Nanowires
        Type: general
      – SubjectFull: Schottky barrier diodes
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      – TitleFull: Rectifying diode made of individual gallium nitride nanowire
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            NameFull: Kim, Jae-Ryoung
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            NameFull: Oh, Hwangyou
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            NameFull: So, Hye Mi
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            NameFull: Kim, Jinhee
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              Text: May2003
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              Y: 2003
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            – TitleFull: Physica E
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