Bibliographic Details
| Title: |
Hierarchical methods to improve the performance of the SiC-FET as SO2 sensors in flue gas desulphurization systems. |
| Authors: |
Darmastuti, Z.1 zhada@ifm.liu.se, Bur, C.1,2, Lindqvist, N.3, Andersson, M.1, Schütze, A.2, Spetz, A. Lloyd1 |
| Source: |
Sensors & Actuators B: Chemical. Jan2015, Vol. 206, p609-616. 8p. |
| Subjects: |
Silicon carbide, Silica, Chemical detectors, Flue gas desulfurization, Field-effect transistors |
| Abstract: |
Experiments were performed both in the laboratory and a desulfurization pilot unit in order to improve the SiC-FET sensor performance using two-step data evaluation. In both cases, a porous Pt-gate enhancement type SiC-FET was utilized in a temperature cycled operation (TCO). Liner Discriminant Analysis (LDA) was chosen as the method for multivariate data analysis. Hierarchical methods with two-step LDA worked quite well in the laboratory tests with SO 2 concentrations varied from 25 to 200 ppm. The same data evaluation was also applied to tests in the desulfurization pilot unit, with higher gas flow and a larger SO 2 concentration range (up to 5000 ppm). The results from the SO 2 quantification showed a significantly improved fit to corresponding reference instrument (FTIR) values. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
