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MoO3 Doping Effects on the Performance of CuO High-Temperature Current Rectifiers.

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Bibliographic Details
Title: MoO3 Doping Effects on the Performance of CuO High-Temperature Current Rectifiers.
Authors: Zanoon, Tareq1 (AUTHOR), Qasrawi, A. F.2,3 (AUTHOR) atef.qasrawi@aaup.edu, Alawneh, Isam4 (AUTHOR), Khanfar, Hazem K.1 (AUTHOR)
Source: Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ). Sep2026, Vol. 51 Issue 17, p20479-20491. 13p.
Subject Terms: *Electric current rectifiers, *Copper oxide films, *Thermionic emission, *X-ray powder diffraction, *Molybdenum oxides, *Semiconductor junctions, *Vapor-plating
Abstract: Herein, CuO thin films were thermally evaporated onto n-Si and doped with MoO3 (MCO-xx, where xx denotes the dopant wt.%). XRD confirmed a monoclinic CuO phase for all films, while MoO3 incorporation strongly modified the microstructure: 0.5 wt.% produced a marked increase in crystallite size with a substantial reduction in microstrain, stacking faults, and line-defect density, whereas higher dopant levels partially reintroduced lattice distortion. The resulting n-Si/p-CuO rectifiers exhibited high, bias-dependent rectification ratios, reaching 109 and 5600 at 1.5 and 5.0 V for the undoped device, respectively, and increasing by about fourfold at 1.5 V for 1.5 wt.% doping. Current–voltage characteristics measured over 298–373 K revealed a progressive reduction of rectification with temperature while preserving rectifying behavior up to 373 K. Transport analysis indicates that thermionic emission and thermally assisted tunneling govern conduction at room temperature; MoO3​ doping lowers the effective barrier height and reduces the tunneling width, whereas increasing temperature increases the extracted barrier height. These findings demonstrate that MoO3-modified CuO/Si interfaces can deliver low-voltage rectification with sustained operation at elevated temperature. [ABSTRACT FROM AUTHOR]
Database: Energy & Power Source
Description
Abstract:Herein, CuO thin films were thermally evaporated onto n-Si and doped with MoO3 (MCO-xx, where xx denotes the dopant wt.%). XRD confirmed a monoclinic CuO phase for all films, while MoO3 incorporation strongly modified the microstructure: 0.5 wt.% produced a marked increase in crystallite size with a substantial reduction in microstrain, stacking faults, and line-defect density, whereas higher dopant levels partially reintroduced lattice distortion. The resulting n-Si/p-CuO rectifiers exhibited high, bias-dependent rectification ratios, reaching 109 and 5600 at 1.5 and 5.0 V for the undoped device, respectively, and increasing by about fourfold at 1.5 V for 1.5 wt.% doping. Current–voltage characteristics measured over 298–373 K revealed a progressive reduction of rectification with temperature while preserving rectifying behavior up to 373 K. Transport analysis indicates that thermionic emission and thermally assisted tunneling govern conduction at room temperature; MoO3​ doping lowers the effective barrier height and reduces the tunneling width, whereas increasing temperature increases the extracted barrier height. These findings demonstrate that MoO3-modified CuO/Si interfaces can deliver low-voltage rectification with sustained operation at elevated temperature. [ABSTRACT FROM AUTHOR]
ISSN:2193567X
DOI:10.1007/s13369-026-11197-y