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MoO3 Doping Effects on the Performance of CuO High-Temperature Current Rectifiers.

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Title: MoO3 Doping Effects on the Performance of CuO High-Temperature Current Rectifiers.
Authors: Zanoon, Tareq1 (AUTHOR), Qasrawi, A. F.2,3 (AUTHOR) atef.qasrawi@aaup.edu, Alawneh, Isam4 (AUTHOR), Khanfar, Hazem K.1 (AUTHOR)
Source: Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ). Sep2026, Vol. 51 Issue 17, p20479-20491. 13p.
Subject Terms: *Electric current rectifiers, *Copper oxide films, *Thermionic emission, *X-ray powder diffraction, *Molybdenum oxides, *Semiconductor junctions, *Vapor-plating
Abstract: Herein, CuO thin films were thermally evaporated onto n-Si and doped with MoO3 (MCO-xx, where xx denotes the dopant wt.%). XRD confirmed a monoclinic CuO phase for all films, while MoO3 incorporation strongly modified the microstructure: 0.5 wt.% produced a marked increase in crystallite size with a substantial reduction in microstrain, stacking faults, and line-defect density, whereas higher dopant levels partially reintroduced lattice distortion. The resulting n-Si/p-CuO rectifiers exhibited high, bias-dependent rectification ratios, reaching 109 and 5600 at 1.5 and 5.0 V for the undoped device, respectively, and increasing by about fourfold at 1.5 V for 1.5 wt.% doping. Current–voltage characteristics measured over 298–373 K revealed a progressive reduction of rectification with temperature while preserving rectifying behavior up to 373 K. Transport analysis indicates that thermionic emission and thermally assisted tunneling govern conduction at room temperature; MoO3​ doping lowers the effective barrier height and reduces the tunneling width, whereas increasing temperature increases the extracted barrier height. These findings demonstrate that MoO3-modified CuO/Si interfaces can deliver low-voltage rectification with sustained operation at elevated temperature. [ABSTRACT FROM AUTHOR]
Database: Energy & Power Source
FullText Text:
  Availability: 0
Header DbId: enr
DbLabel: Energy & Power Source
An: 197188673
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: MoO<subscript>3</subscript> Doping Effects on the Performance of CuO High-Temperature Current Rectifiers.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Zanoon%2C+Tareq%22">Zanoon, Tareq</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Qasrawi%2C+A%2E+F%2E%22">Qasrawi, A. F.</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<i> atef.qasrawi@aaup.edu</i><br /><searchLink fieldCode="AR" term="%22Alawneh%2C+Isam%22">Alawneh, Isam</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Khanfar%2C+Hazem+K%2E%22">Khanfar, Hazem K.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Arabian+Journal+for+Science+%26+Engineering+%28Springer+Science+%26+Business+Media+B%2EV%2E+%29%22">Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. )</searchLink>. Sep2026, Vol. 51 Issue 17, p20479-20491. 13p.
– Name: Subject
  Label: Subject Terms
  Group: Su
  Data: *<searchLink fieldCode="DE" term="%22Electric+current+rectifiers%22">Electric current rectifiers</searchLink><br />*<searchLink fieldCode="DE" term="%22Copper+oxide+films%22">Copper oxide films</searchLink><br />*<searchLink fieldCode="DE" term="%22Thermionic+emission%22">Thermionic emission</searchLink><br />*<searchLink fieldCode="DE" term="%22X-ray+powder+diffraction%22">X-ray powder diffraction</searchLink><br />*<searchLink fieldCode="DE" term="%22Molybdenum+oxides%22">Molybdenum oxides</searchLink><br />*<searchLink fieldCode="DE" term="%22Semiconductor+junctions%22">Semiconductor junctions</searchLink><br />*<searchLink fieldCode="DE" term="%22Vapor-plating%22">Vapor-plating</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Herein, CuO thin films were thermally evaporated onto n-Si and doped with MoO3 (MCO-xx, where xx denotes the dopant wt.%). XRD confirmed a monoclinic CuO phase for all films, while MoO3 incorporation strongly modified the microstructure: 0.5 wt.% produced a marked increase in crystallite size with a substantial reduction in microstrain, stacking faults, and line-defect density, whereas higher dopant levels partially reintroduced lattice distortion. The resulting n-Si/p-CuO rectifiers exhibited high, bias-dependent rectification ratios, reaching 109 and 5600 at 1.5 and 5.0 V for the undoped device, respectively, and increasing by about fourfold at 1.5 V for 1.5 wt.% doping. Current–voltage characteristics measured over 298–373 K revealed a progressive reduction of rectification with temperature while preserving rectifying behavior up to 373 K. Transport analysis indicates that thermionic emission and thermally assisted tunneling govern conduction at room temperature; MoO3​ doping lowers the effective barrier height and reduces the tunneling width, whereas increasing temperature increases the extracted barrier height. These findings demonstrate that MoO3-modified CuO/Si interfaces can deliver low-voltage rectification with sustained operation at elevated temperature. [ABSTRACT FROM AUTHOR]
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s13369-026-11197-y
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 13
        StartPage: 20479
    Subjects:
      – SubjectFull: Electric current rectifiers
        Type: general
      – SubjectFull: Copper oxide films
        Type: general
      – SubjectFull: Thermionic emission
        Type: general
      – SubjectFull: X-ray powder diffraction
        Type: general
      – SubjectFull: Molybdenum oxides
        Type: general
      – SubjectFull: Semiconductor junctions
        Type: general
      – SubjectFull: Vapor-plating
        Type: general
    Titles:
      – TitleFull: MoO3 Doping Effects on the Performance of CuO High-Temperature Current Rectifiers.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Zanoon, Tareq
      – PersonEntity:
          Name:
            NameFull: Qasrawi, A. F.
      – PersonEntity:
          Name:
            NameFull: Alawneh, Isam
      – PersonEntity:
          Name:
            NameFull: Khanfar, Hazem K.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 09
              Text: Sep2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 2193567X
          Numbering:
            – Type: volume
              Value: 51
            – Type: issue
              Value: 17
          Titles:
            – TitleFull: Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. )
              Type: main
ResultId 1