Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH4.
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| Title: | Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH |
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| Authors: | Chie-Sheng Liu1, Li-Wei Chou1, Lu-Sheng Hong1, hongls@mail.ntust.edu.tw, Jyh-Chiang Jiang1, jcjiang@mail.ntust.edu.tw |
| Source: | Journal of the American Chemical Society; 4/23/2008, Vol. 130 Issue 16, p5440-5442, 3p, 2 Diagrams |
| Database: | Humanities Source |
| ISSN: | 00027863 |
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| DOI: | 10.1021/ja710802s |
