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Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH4.

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Title: Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH4.
Authors: Chie-Sheng Liu1, Li-Wei Chou1, Lu-Sheng Hong1, hongls@mail.ntust.edu.tw, Jyh-Chiang Jiang1, jcjiang@mail.ntust.edu.tw
Source: Journal of the American Chemical Society; 4/23/2008, Vol. 130 Issue 16, p5440-5442, 3p, 2 Diagrams
Database: Humanities Source
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DbLabel: Humanities Source
An: 31880795
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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    Identifiers:
      – Type: doi
        Value: 10.1021/ja710802s
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 5440
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      – TitleFull: Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH4.
        Type: main
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          Name:
            NameFull: Chie-Sheng Liu
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          Name:
            NameFull: Li-Wei Chou
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            NameFull: Lu-Sheng Hong
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            NameFull: Jyh-Chiang Jiang
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            – D: 23
              M: 04
              Text: 4/23/2008
              Type: published
              Y: 2008
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              Value: 00027863
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              Value: 130
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              Value: 16
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            – TitleFull: Journal of the American Chemical Society
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