Bibliographic Details
| Title: |
Influence of defects on cathodoluminescence along ZnTexO1-x--ZnO microstructures grown by the vapour-solid technique. |
| Authors: |
Iribarren, A.1,2 augusto@fisica.uh.cu, Fernández, P.2, Piqueras, J.2 |
| Source: |
Revista Cubana de Física. 2009, Vol. 26 Issue 2A, p116-119. 4p. 1 Black and White Photograph, 4 Graphs. |
| Subjects: |
CATHODOLUMINESCENCE, SEMICONDUCTOR doping, SURFACE defects, MICROSTRUCTURE, PHYSICAL vapor deposition, MATERIALS |
| Abstract (English): |
The behaviour of the cathodeluminescence (CL) along elongated ZnO microstructures with isoelectronic Te doping, which were obtained by the vapour -- solid technique is presented. The CL intensity changes along the microstructures due to the influence of the defects. Two main defect kinds were considered, the vacancy and the structural disorder. Each defect kind has different influence on the CL intensity, which is observed in the study of selected typical structures. The degree of influence of each defect was analysed from the experimental data. The recombination lifetimes for each defect were also estimated. [ABSTRACT FROM AUTHOR] |
| Abstract (Spanish): |
Se presenta el comportamiento de la emisión catodoluminiscente (CL) a lo largo de microestructuras alargadas de ZnO con impurificación isovalente de Te que fueron obtenidas por la técnica de vapor -- sólido. La intensidad de la CL varía a lo largo de las microestructuras debido a la influencia de los defectos. Dos defectos principales fueron considerados, las vacancias y el desorden estructural. Cada defecto tiene diferente influencia sobre la intensidad de la CL, lo que se observa en el estudio de estructuras típicas seleccionadas. El grado de influencia de cada defecto fue analizado de los datos experimentales. Los tiempos de vida de recombinación en cada defecto fueron también estimados. [ABSTRACT FROM AUTHOR] |
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| Database: |
MedicLatina |
