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Influence of defects on cathodoluminescence along ZnTexO1-x--ZnO microstructures grown by the vapour-solid technique.

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Title: Influence of defects on cathodoluminescence along ZnTexO1-x--ZnO microstructures grown by the vapour-solid technique.
Authors: Iribarren, A.1,2 augusto@fisica.uh.cu, Fernández, P.2, Piqueras, J.2
Source: Revista Cubana de Física. 2009, Vol. 26 Issue 2A, p116-119. 4p. 1 Black and White Photograph, 4 Graphs.
Subjects: CATHODOLUMINESCENCE, SEMICONDUCTOR doping, SURFACE defects, MICROSTRUCTURE, PHYSICAL vapor deposition, MATERIALS
Abstract (English): The behaviour of the cathodeluminescence (CL) along elongated ZnO microstructures with isoelectronic Te doping, which were obtained by the vapour -- solid technique is presented. The CL intensity changes along the microstructures due to the influence of the defects. Two main defect kinds were considered, the vacancy and the structural disorder. Each defect kind has different influence on the CL intensity, which is observed in the study of selected typical structures. The degree of influence of each defect was analysed from the experimental data. The recombination lifetimes for each defect were also estimated. [ABSTRACT FROM AUTHOR]
Abstract (Spanish): Se presenta el comportamiento de la emisión catodoluminiscente (CL) a lo largo de microestructuras alargadas de ZnO con impurificación isovalente de Te que fueron obtenidas por la técnica de vapor -- sólido. La intensidad de la CL varía a lo largo de las microestructuras debido a la influencia de los defectos. Dos defectos principales fueron considerados, las vacancias y el desorden estructural. Cada defecto tiene diferente influencia sobre la intensidad de la CL, lo que se observa en el estudio de estructuras típicas seleccionadas. El grado de influencia de cada defecto fue analizado de los datos experimentales. Los tiempos de vida de recombinación en cada defecto fueron también estimados. [ABSTRACT FROM AUTHOR]
Copyright of Revista Cubana de Física is the property of Universidad de La Habana and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: MedicLatina
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An: 73882100
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Influence of defects on cathodoluminescence along ZnTe<subscript>x</subscript>O<subscript>1-x</subscript>--ZnO microstructures grown by the vapour-solid technique.
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  Data: <searchLink fieldCode="AR" term="%22Iribarren%2C+A%2E%22">Iribarren, A.</searchLink><relatesTo>1,2</relatesTo><i> augusto@fisica.uh.cu</i><br /><searchLink fieldCode="AR" term="%22Fernández%2C+P%2E%22">Fernández, P.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Piqueras%2C+J%2E%22">Piqueras, J.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Revista+Cubana+de+Física%22">Revista Cubana de Física</searchLink>. 2009, Vol. 26 Issue 2A, p116-119. 4p. 1 Black and White Photograph, 4 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22CATHODOLUMINESCENCE%22">CATHODOLUMINESCENCE</searchLink><br /><searchLink fieldCode="DE" term="%22SEMICONDUCTOR+doping%22">SEMICONDUCTOR doping</searchLink><br /><searchLink fieldCode="DE" term="%22SURFACE+defects%22">SURFACE defects</searchLink><br /><searchLink fieldCode="DE" term="%22MICROSTRUCTURE%22">MICROSTRUCTURE</searchLink><br /><searchLink fieldCode="DE" term="%22PHYSICAL+vapor+deposition%22">PHYSICAL vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22MATERIALS%22">MATERIALS</searchLink>
– Name: Abstract
  Label: Abstract (English)
  Group: Ab
  Data: The behaviour of the cathodeluminescence (CL) along elongated ZnO microstructures with isoelectronic Te doping, which were obtained by the vapour -- solid technique is presented. The CL intensity changes along the microstructures due to the influence of the defects. Two main defect kinds were considered, the vacancy and the structural disorder. Each defect kind has different influence on the CL intensity, which is observed in the study of selected typical structures. The degree of influence of each defect was analysed from the experimental data. The recombination lifetimes for each defect were also estimated. [ABSTRACT FROM AUTHOR]
– Name: Abstract
  Label: Abstract (Spanish)
  Group: Ab
  Data: Se presenta el comportamiento de la emisión catodoluminiscente (CL) a lo largo de microestructuras alargadas de ZnO con impurificación isovalente de Te que fueron obtenidas por la técnica de vapor -- sólido. La intensidad de la CL varía a lo largo de las microestructuras debido a la influencia de los defectos. Dos defectos principales fueron considerados, las vacancias y el desorden estructural. Cada defecto tiene diferente influencia sobre la intensidad de la CL, lo que se observa en el estudio de estructuras típicas seleccionadas. El grado de influencia de cada defecto fue analizado de los datos experimentales. Los tiempos de vida de recombinación en cada defecto fueron también estimados. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Revista Cubana de Física is the property of Universidad de La Habana and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 116
    Subjects:
      – SubjectFull: CATHODOLUMINESCENCE
        Type: general
      – SubjectFull: SEMICONDUCTOR doping
        Type: general
      – SubjectFull: SURFACE defects
        Type: general
      – SubjectFull: MICROSTRUCTURE
        Type: general
      – SubjectFull: PHYSICAL vapor deposition
        Type: general
      – SubjectFull: MATERIALS
        Type: general
    Titles:
      – TitleFull: Influence of defects on cathodoluminescence along ZnTexO1-x--ZnO microstructures grown by the vapour-solid technique.
        Type: main
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            NameFull: Iribarren, A.
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            NameFull: Fernández, P.
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            NameFull: Piqueras, J.
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            – D: 01
              M: 07
              Text: 2009
              Type: published
              Y: 2009
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              Value: 02539268
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              Value: 26
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            – TitleFull: Revista Cubana de Física
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