Bibliographic Details
| Title: |
Ab initio simulations of homoepitaxial SiC growth. |
| Authors: |
Righi MC; INFM-National Research Center on nanoStructures and bioSystems at Surfaces (S3), Dipartimento di Fisica, Università di Modena e Reggio Emilia, Via Campi 213/A, 41100 Modena, Italy. mcrighi@unimore.it, Pignedoli CA, Di Felice R, Bertoni CM, Catellani A |
| Source: |
Physical review letters [Phys Rev Lett] 2003 Sep 26; Vol. 91 (13), pp. 136101. Date of Electronic Publication: 2003 Sep 23. |
| Publication Type: |
Journal Article |
| Journal Info: |
Publisher: American Physical Society Country of Publication: United States NLM ID: 0401141 Publication Model: Print-Electronic Cited Medium: Print ISSN: 0031-9007 (Print) Linking ISSN: 00319007 NLM ISO Abbreviation: Phys Rev Lett Subsets: PubMed not MEDLINE |
| Database: |
MEDLINE Ultimate |
