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Ab initio simulations of homoepitaxial SiC growth.

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Title: Ab initio simulations of homoepitaxial SiC growth.
Authors: Righi MC; INFM-National Research Center on nanoStructures and bioSystems at Surfaces (S3), Dipartimento di Fisica, Università di Modena e Reggio Emilia, Via Campi 213/A, 41100 Modena, Italy. mcrighi@unimore.it, Pignedoli CA, Di Felice R, Bertoni CM, Catellani A
Source: Physical review letters [Phys Rev Lett] 2003 Sep 26; Vol. 91 (13), pp. 136101. Date of Electronic Publication: 2003 Sep 23.
Publication Type: Journal Article
Journal Info: Publisher: American Physical Society Country of Publication: United States NLM ID: 0401141 Publication Model: Print-Electronic Cited Medium: Print ISSN: 0031-9007 (Print) Linking ISSN: 00319007 NLM ISO Abbreviation: Phys Rev Lett Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Ab initio simulations of homoepitaxial SiC growth.
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  Data: <searchLink fieldCode="AU" term="%22Righi+MC%22">Righi MC</searchLink>; INFM-National Research Center on nanoStructures and bioSystems at Surfaces (S3), Dipartimento di Fisica, Università di Modena e Reggio Emilia, Via Campi 213/A, 41100 Modena, Italy. mcrighi@unimore.it<br /><searchLink fieldCode="AU" term="%22Pignedoli+CA%22">Pignedoli CA</searchLink><br /><searchLink fieldCode="AU" term="%22Di+Felice+R%22">Di Felice R</searchLink><br /><searchLink fieldCode="AU" term="%22Bertoni+CM%22">Bertoni CM</searchLink><br /><searchLink fieldCode="AU" term="%22Catellani+A%22">Catellani A</searchLink>
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  Data: <searchLink fieldCode="JN" term="%220401141%22">Physical review letters</searchLink> [Phys Rev Lett] 2003 Sep 26; Vol. 91 (13), pp. 136101. <i>Date of Electronic Publication: </i>2003 Sep 23.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Physical+Society%22">American Physical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>0401141 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Print <i>ISSN: </i>0031-9007 (Print) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2200319007%22">00319007 </searchLink><i>NLM ISO Abbreviation: </i>Phys Rev Lett <i>Subsets: </i>PubMed not MEDLINE
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      – Type: doi
        Value: 10.1103/PhysRevLett.91.136101
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      – Code: eng
        Text: English
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        StartPage: 136101
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      – TitleFull: Ab initio simulations of homoepitaxial SiC growth.
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            NameFull: Righi MC
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            NameFull: Pignedoli CA
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            NameFull: Di Felice R
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            NameFull: Bertoni CM
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            – D: 26
              M: 09
              Text: 2003 Sep 26
              Type: published
              Y: 2003
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              Value: 13
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            – TitleFull: Physical review letters
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