Bibliographic Details
| Title: |
Monovacancy and interstitial migration in ion-implanted silicon. |
| Authors: |
Coleman PG; Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom., Burrows CP |
| Source: |
Physical review letters [Phys Rev Lett] 2007 Jun 29; Vol. 98 (26), pp. 265502. Date of Electronic Publication: 2007 Jun 29. |
| Publication Type: |
Journal Article |
| Journal Info: |
Publisher: American Physical Society Country of Publication: United States NLM ID: 0401141 Publication Model: Print-Electronic Cited Medium: Print ISSN: 0031-9007 (Print) Linking ISSN: 00319007 NLM ISO Abbreviation: Phys Rev Lett Subsets: PubMed not MEDLINE |
| Database: |
MEDLINE Ultimate |
