Solid-state memories based on ferroelectric tunnel junctions.
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| Title: | Solid-state memories based on ferroelectric tunnel junctions. |
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| Authors: | Chanthbouala A; Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, Campus de l'Ecole Polytechnique, 91767 Palaiseau and Université Paris-Sud, 91405 Orsay, France., Crassous A, Garcia V, Bouzehouane K, Fusil S, Moya X, Allibe J, Dlubak B, Grollier J, Xavier S, Deranlot C, Moshar A, Proksch R, Mathur ND, Bibes M, Barthélémy A |
| Source: | Nature nanotechnology [Nat Nanotechnol] 2011 Dec 04; Vol. 7 (2), pp. 101-4. Date of Electronic Publication: 2011 Dec 04. |
| Publication Type: | Journal Article; Research Support, Non-U.S. Gov't |
| Journal Info: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101283273 Publication Model: Electronic Cited Medium: Internet ISSN: 1748-3395 (Electronic) Linking ISSN: 17483387 NLM ISO Abbreviation: Nat Nanotechnol Subsets: MEDLINE |
| Database: | MEDLINE Ultimate |
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