Bandgap engineering of strained monolayer and bilayer MoS2.

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Bibliographic Details
Title: Bandgap engineering of strained monolayer and bilayer MoS2.
Authors: Conley HJ; Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States., Wang B, Ziegler JI, Haglund RF Jr, Pantelides ST, Bolotin KI
Source: Nano letters [Nano Lett] 2013 Aug 14; Vol. 13 (8), pp. 3626-30. Date of Electronic Publication: 2013 Jul 09.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1530-6992
DOI:10.1021/nl4014748