Bandgap engineering of strained monolayer and bilayer MoS2.
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| Title: | Bandgap engineering of strained monolayer and bilayer MoS2. |
|---|---|
| Authors: | Conley HJ; Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States., Wang B, Ziegler JI, Haglund RF Jr, Pantelides ST, Bolotin KI |
| Source: | Nano letters [Nano Lett] 2013 Aug 14; Vol. 13 (8), pp. 3626-30. Date of Electronic Publication: 2013 Jul 09. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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