Annealing Dependence of Solution-Processed Ultra-Thin ZrOx Films for Gate Dielectric Applications.

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Bibliographic Details
Title: Annealing Dependence of Solution-Processed Ultra-Thin ZrOx Films for Gate Dielectric Applications.
Authors: Liu GX, Liu A, Meng Y, Shan FK, Shin BC, Lee WJ, Cho CR
Source: Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2015 Mar; Vol. 15 (3), pp. 2185-91.
Publication Type: Journal Article; Research Support, Non-U.S. Gov't
Journal Info: Publisher: American Scientific Publishers Country of Publication: United States NLM ID: 101088195 Publication Model: Print Cited Medium: Internet ISSN: 1533-4899 (Electronic) Linking ISSN: 15334880 NLM ISO Abbreviation: J Nanosci Nanotechnol Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1533-4899
DOI:10.1166/jnn.2015.10228