Thickness-Dependent Resistive Switching Behavior of KCu7S₄/CuxO/Au Device.

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Bibliographic Details
Title: Thickness-Dependent Resistive Switching Behavior of KCu7S₄/CuxO/Au Device.
Authors: Wang YY; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Wang ZY; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Peng W; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Xu JY; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Chen SR; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Ye B; School of Automotive and Transport Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Wu CY; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Source: Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2019 May 01; Vol. 19 (5), pp. 2844-2850.
Publication Type: Journal Article
Journal Info: Publisher: American Scientific Publishers Country of Publication: United States NLM ID: 101088195 Publication Model: Print Cited Medium: Print ISSN: 1533-4880 (Print) Linking ISSN: 15334880 NLM ISO Abbreviation: J Nanosci Nanotechnol Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1533-4880
DOI:10.1166/jnn.2019.15815