View in EDS

Thickness-Dependent Resistive Switching Behavior of KCu7S₄/CuxO/Au Device.

Saved in:
Bibliographic Details
Title: Thickness-Dependent Resistive Switching Behavior of KCu7S₄/CuxO/Au Device.
Authors: Wang YY; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Wang ZY; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Peng W; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Xu JY; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Chen SR; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Ye B; School of Automotive and Transport Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China., Wu CY; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Source: Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2019 May 01; Vol. 19 (5), pp. 2844-2850.
Publication Type: Journal Article
Journal Info: Publisher: American Scientific Publishers Country of Publication: United States NLM ID: 101088195 Publication Model: Print Cited Medium: Print ISSN: 1533-4880 (Print) Linking ISSN: 15334880 NLM ISO Abbreviation: J Nanosci Nanotechnol Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
FullText Text:
  Availability: 0
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 30501789
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Thickness-Dependent Resistive Switching Behavior of KCu<subscript>7</subscript>S₄/Cu<subscript>x</subscript>O/Au Device.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Wang+YY%22">Wang YY</searchLink>; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.<br /><searchLink fieldCode="AU" term="%22Wang+ZY%22">Wang ZY</searchLink>; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.<br /><searchLink fieldCode="AU" term="%22Peng+W%22">Peng W</searchLink>; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.<br /><searchLink fieldCode="AU" term="%22Xu+JY%22">Xu JY</searchLink>; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.<br /><searchLink fieldCode="AU" term="%22Chen+SR%22">Chen SR</searchLink>; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.<br /><searchLink fieldCode="AU" term="%22Ye+B%22">Ye B</searchLink>; School of Automotive and Transport Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.<br /><searchLink fieldCode="AU" term="%22Wu+CY%22">Wu CY</searchLink>; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101088195%22">Journal of nanoscience and nanotechnology</searchLink> [J Nanosci Nanotechnol] 2019 May 01; Vol. 19 (5), pp. 2844-2850.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Scientific+Publishers%22">American Scientific Publishers </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101088195 <i>Publication Model: </i>Print <i>Cited Medium: </i>Print <i>ISSN: </i>1533-4880 (Print) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2215334880%22">15334880 </searchLink><i>NLM ISO Abbreviation: </i>J Nanosci Nanotechnol <i>Subsets: </i>PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=30501789
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1166/jnn.2019.15815
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: 2844
    Titles:
      – TitleFull: Thickness-Dependent Resistive Switching Behavior of KCu7S₄/CuxO/Au Device.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Wang YY
      – PersonEntity:
          Name:
            NameFull: Wang ZY
      – PersonEntity:
          Name:
            NameFull: Peng W
      – PersonEntity:
          Name:
            NameFull: Xu JY
      – PersonEntity:
          Name:
            NameFull: Chen SR
      – PersonEntity:
          Name:
            NameFull: Ye B
      – PersonEntity:
          Name:
            NameFull: Wu CY
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 05
              Text: 2019 May 01
              Type: published
              Y: 2019
          Identifiers:
            – Type: issn-print
              Value: 1533-4880
          Numbering:
            – Type: volume
              Value: 19
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Journal of nanoscience and nanotechnology
              Type: main
ResultId 1