| Authors: |
Zhang F; Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA.; Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA., Zhang H; Theiss Research, Inc., La Jolla, CA, USA. huairuo.zhang@nist.gov.; Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA. huairuo.zhang@nist.gov., Krylyuk S; Theiss Research, Inc., La Jolla, CA, USA.; Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA., Milligan CA; Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA.; School of Chemical Engineering, Purdue University, West Lafayette, IN, USA., Zhu Y; Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA.; Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA., Zemlyanov DY; Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA., Bendersky LA; Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA., Burton BP; Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA., Davydov AV; Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA., Appenzeller J; Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA. appenzeller@purdue.edu.; Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA. appenzeller@purdue.edu. |
