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Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure.

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Title: Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure.
Authors: Jung KS; Department of Semiconductor and Display Engineering Sungkyunkwan University Suwon 440-746 South Korea.; Memory Technology Design Team Samsung Electronics Co. Hwasung 18448 South Korea., Heo K; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea., Kim MJ; SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University Suwon 440-746 South Korea., Andreev M; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea., Seo S; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea., Kim JO; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea., Lim JH; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea., Kim KH; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea., Kim S; Jet Propulsion Laboratory (JPL) California Institute of Technology Pasadena CA 91109 USA., Kim KS; Research Laboratory of Electronics Massachusetts Institute of Technology (MIT) Cambridge MA 02139-4307 USA.; School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440-746 South Korea., Yeom GY; School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440-746 South Korea., Cho JH; Department of Chemical and Biomolecular Engineering Yonsei University Seoul 120-749 South Korea., Park JH; Department of Semiconductor and Display Engineering Sungkyunkwan University Suwon 440-746 South Korea.; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea.
Source: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2020 Aug 05; Vol. 7 (19), pp. 2000991. Date of Electronic Publication: 2020 Aug 05 (Print Publication: 2020).
Publication Type: Journal Article
Journal Info: Publisher: WILEY-VCH Country of Publication: Germany NLM ID: 101664569 Publication Model: eCollection Cited Medium: Print ISSN: 2198-3844 (Print) Linking ISSN: 21983844 NLM ISO Abbreviation: Adv Sci (Weinh) Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure.
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  Data: <searchLink fieldCode="AU" term="%22Jung+KS%22">Jung KS</searchLink>; Department of Semiconductor and Display Engineering Sungkyunkwan University Suwon 440-746 South Korea.; Memory Technology Design Team Samsung Electronics Co. Hwasung 18448 South Korea.<br /><searchLink fieldCode="AU" term="%22Heo+K%22">Heo K</searchLink>; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea.<br /><searchLink fieldCode="AU" term="%22Kim+MJ%22">Kim MJ</searchLink>; SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University Suwon 440-746 South Korea.<br /><searchLink fieldCode="AU" term="%22Andreev+M%22">Andreev M</searchLink>; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea.<br /><searchLink fieldCode="AU" term="%22Seo+S%22">Seo S</searchLink>; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea.<br /><searchLink fieldCode="AU" term="%22Kim+JO%22">Kim JO</searchLink>; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea.<br /><searchLink fieldCode="AU" term="%22Lim+JH%22">Lim JH</searchLink>; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea.<br /><searchLink fieldCode="AU" term="%22Kim+KH%22">Kim KH</searchLink>; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea.<br /><searchLink fieldCode="AU" term="%22Kim+S%22">Kim S</searchLink>; Jet Propulsion Laboratory (JPL) California Institute of Technology Pasadena CA 91109 USA.<br /><searchLink fieldCode="AU" term="%22Kim+KS%22">Kim KS</searchLink>; Research Laboratory of Electronics Massachusetts Institute of Technology (MIT) Cambridge MA 02139-4307 USA.; School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440-746 South Korea.<br /><searchLink fieldCode="AU" term="%22Yeom+GY%22">Yeom GY</searchLink>; School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440-746 South Korea.<br /><searchLink fieldCode="AU" term="%22Cho+JH%22">Cho JH</searchLink>; Department of Chemical and Biomolecular Engineering Yonsei University Seoul 120-749 South Korea.<br /><searchLink fieldCode="AU" term="%22Park+JH%22">Park JH</searchLink>; Department of Semiconductor and Display Engineering Sungkyunkwan University Suwon 440-746 South Korea.; Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440-746 South Korea.
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  Data: <searchLink fieldCode="JN" term="%22101664569%22">Advanced science (Weinheim, Baden-Wurttemberg, Germany)</searchLink> [Adv Sci (Weinh)] 2020 Aug 05; Vol. 7 (19), pp. 2000991. <i>Date of Electronic Publication: </i>2020 Aug 05 (<i>Print Publication: </i>2020).
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