| Authors: |
Kim TW; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.; Department of Electronic Engineering, Korea University, Seoul 02841, Korea., Ra HS; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea., Ahn J; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea., Jang J; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea., Taniguchi T; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan., Watanabe K; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan., Shim JW; Department of Electronic Engineering, Korea University, Seoul 02841, Korea., Lee YT; Department of Electronic Engineering, Inha University, Incheon 22212, Korea., Hwang DK; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea. |
