APA (7th ed.) Citation

TW, K., HS, R., J, A., J, J., T, T., K, W., . . . DK, H. (2021). Frequency Doubler and Universal Logic Gate Based on Two-Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption. ACS applied materials & interfaces, 13(6), 7470. https://doi.org/10.1021/acsami.0c21222

Chicago Style (17th ed.) Citation

TW, Kim, Ra HS, Ahn J, Jang J, Taniguchi T, Watanabe K, Shim JW, Lee YT, and Hwang DK. "Frequency Doubler and Universal Logic Gate Based on Two-Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption." ACS Applied Materials & Interfaces 13, no. 6 (2021): 7470. https://doi.org/10.1021/acsami.0c21222.

MLA (9th ed.) Citation

TW, Kim, et al. "Frequency Doubler and Universal Logic Gate Based on Two-Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption." ACS Applied Materials & Interfaces, vol. 13, no. 6, 2021, p. 7470, https://doi.org/10.1021/acsami.0c21222.