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Frequency Doubler and Universal Logic Gate Based on Two-Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption.

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Title: Frequency Doubler and Universal Logic Gate Based on Two-Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption.
Authors: Kim TW; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.; Department of Electronic Engineering, Korea University, Seoul 02841, Korea., Ra HS; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea., Ahn J; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea., Jang J; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea., Taniguchi T; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan., Watanabe K; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan., Shim JW; Department of Electronic Engineering, Korea University, Seoul 02841, Korea., Lee YT; Department of Electronic Engineering, Inha University, Incheon 22212, Korea., Hwang DK; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2021 Feb 17; Vol. 13 (6), pp. 7470-7475. Date of Electronic Publication: 2021 Feb 02.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Availability: 0
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 33528986
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Frequency Doubler and Universal Logic Gate Based on Two-Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Kim+TW%22">Kim TW</searchLink>; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.; Department of Electronic Engineering, Korea University, Seoul 02841, Korea.<br /><searchLink fieldCode="AU" term="%22Ra+HS%22">Ra HS</searchLink>; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.<br /><searchLink fieldCode="AU" term="%22Ahn+J%22">Ahn J</searchLink>; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.<br /><searchLink fieldCode="AU" term="%22Jang+J%22">Jang J</searchLink>; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Taniguchi+T%22">Taniguchi T</searchLink>; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan.<br /><searchLink fieldCode="AU" term="%22Watanabe+K%22">Watanabe K</searchLink>; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan.<br /><searchLink fieldCode="AU" term="%22Shim+JW%22">Shim JW</searchLink>; Department of Electronic Engineering, Korea University, Seoul 02841, Korea.<br /><searchLink fieldCode="AU" term="%22Lee+YT%22">Lee YT</searchLink>; Department of Electronic Engineering, Inha University, Incheon 22212, Korea.<br /><searchLink fieldCode="AU" term="%22Hwang+DK%22">Hwang DK</searchLink>; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101504991%22">ACS applied materials & interfaces</searchLink> [ACS Appl Mater Interfaces] 2021 Feb 17; Vol. 13 (6), pp. 7470-7475. <i>Date of Electronic Publication: </i>2021 Feb 02.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101504991 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1944-8252 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219448244%22">19448244 </searchLink><i>NLM ISO Abbreviation: </i>ACS Appl Mater Interfaces <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=33528986
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1021/acsami.0c21222
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: 7470
    Titles:
      – TitleFull: Frequency Doubler and Universal Logic Gate Based on Two-Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kim TW
      – PersonEntity:
          Name:
            NameFull: Ra HS
      – PersonEntity:
          Name:
            NameFull: Ahn J
      – PersonEntity:
          Name:
            NameFull: Jang J
      – PersonEntity:
          Name:
            NameFull: Taniguchi T
      – PersonEntity:
          Name:
            NameFull: Watanabe K
      – PersonEntity:
          Name:
            NameFull: Shim JW
      – PersonEntity:
          Name:
            NameFull: Lee YT
      – PersonEntity:
          Name:
            NameFull: Hwang DK
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 17
              M: 02
              Text: 2021 Feb 17
              Type: published
              Y: 2021
          Identifiers:
            – Type: issn-electronic
              Value: 1944-8252
          Numbering:
            – Type: volume
              Value: 13
            – Type: issue
              Value: 6
          Titles:
            – TitleFull: ACS applied materials & interfaces
              Type: main
ResultId 1