Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM.
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| Title: | Crystalline defect analysis in epitaxial Si |
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| Authors: | Han H; imec, Kapeldreef 75, 3001, Leuven, Belgium. Electronic address: han.han@imec.be., Strakos L; Thermo Fisher Scientific, Vlastimila Pecha 12, 62700, Brno, Czech Republic., Hantschel T; imec, Kapeldreef 75, 3001, Leuven, Belgium., Porret C; imec, Kapeldreef 75, 3001, Leuven, Belgium., Vystavel T; Thermo Fisher Scientific, Vlastimila Pecha 12, 62700, Brno, Czech Republic., Loo R; imec, Kapeldreef 75, 3001, Leuven, Belgium., Caymax M; imec, Kapeldreef 75, 3001, Leuven, Belgium. |
| Source: | Micron (Oxford, England : 1993) [Micron] 2021 Nov; Vol. 150, pp. 103123. Date of Electronic Publication: 2021 Jul 21. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Pergamon Press Country of Publication: England NLM ID: 9312850 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1878-4291 (Electronic) Linking ISSN: 09684328 NLM ISO Abbreviation: Micron Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| ISSN: | 1878-4291 |
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| DOI: | 10.1016/j.micron.2021.103123 |
