An Asymmetry Field-Effect Phototransistor for Solving Large Exciton Binding Energy of 2D TMDCs.

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Title: An Asymmetry Field-Effect Phototransistor for Solving Large Exciton Binding Energy of 2D TMDCs.
Authors: Ra HS; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Ahn J; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Jang J; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea., Kim TW; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Department of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea., Song SH; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Jeong MH; Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea., Lee SH; Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea., Yoon T; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea., Yoon TW; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea., Kim S; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea., Taniguch T; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan., Watanabe K; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan., Song YJ; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.; Department of Nano Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea., Lee JS; Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea., Hwang DK; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.
Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Feb; Vol. 34 (7), pp. e2107468. Date of Electronic Publication: 2022 Jan 10.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1521-4095
DOI:10.1002/adma.202107468