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An Asymmetry Field-Effect Phototransistor for Solving Large Exciton Binding Energy of 2D TMDCs.

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Title: An Asymmetry Field-Effect Phototransistor for Solving Large Exciton Binding Energy of 2D TMDCs.
Authors: Ra HS; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Ahn J; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Jang J; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea., Kim TW; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Department of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea., Song SH; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Jeong MH; Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea., Lee SH; Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea., Yoon T; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea., Yoon TW; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea., Kim S; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea., Taniguch T; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan., Watanabe K; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan., Song YJ; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.; Department of Nano Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea., Lee JS; Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea., Hwang DK; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.
Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Feb; Vol. 34 (7), pp. e2107468. Date of Electronic Publication: 2022 Jan 10.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: An Asymmetry Field-Effect Phototransistor for Solving Large Exciton Binding Energy of 2D TMDCs.
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  Data: <searchLink fieldCode="AU" term="%22Ra+HS%22">Ra HS</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Ahn+J%22">Ahn J</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jang+J%22">Jang J</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+TW%22">Kim TW</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Department of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Song+SH%22">Song SH</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jeong+MH%22">Jeong MH</searchLink>; Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+SH%22">Lee SH</searchLink>; Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yoon+T%22">Yoon T</searchLink>; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yoon+TW%22">Yoon TW</searchLink>; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+S%22">Kim S</searchLink>; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Taniguch+T%22">Taniguch T</searchLink>; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan.<br /><searchLink fieldCode="AU" term="%22Watanabe+K%22">Watanabe K</searchLink>; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan.<br /><searchLink fieldCode="AU" term="%22Song+YJ%22">Song YJ</searchLink>; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.; Department of Nano Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+JS%22">Lee JS</searchLink>; Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hwang+DK%22">Hwang DK</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%229885358%22">Advanced materials (Deerfield Beach, Fla.)</searchLink> [Adv Mater] 2022 Feb; Vol. 34 (7), pp. e2107468. <i>Date of Electronic Publication: </i>2022 Jan 10.
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              Text: 2022 Feb
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