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Multilayer WSe2 /MoS2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering.

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Title: Multilayer WSe2 /MoS2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering.
Authors: Jeong MH; Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea., Ra HS; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Lee SH; Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea., Kwak DH; Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea., Ahn J; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Yun WS; Convergence Research Institute, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea., Lee J; Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea., Chae WS; Korea Basic Science Institute (KBSI) Daegu Center, Daegu, 41566, Republic of Korea., Hwang DK; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Lee JS; Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea.
Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Feb; Vol. 34 (8), pp. e2108412. Date of Electronic Publication: 2022 Jan 21.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE
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  Data: Multilayer WSe<subscript>2</subscript> /MoS<subscript>2</subscript> Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering.
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  Data: <searchLink fieldCode="AU" term="%22Jeong+MH%22">Jeong MH</searchLink>; Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Ra+HS%22">Ra HS</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+SH%22">Lee SH</searchLink>; Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kwak+DH%22">Kwak DH</searchLink>; Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Ahn+J%22">Ahn J</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yun+WS%22">Yun WS</searchLink>; Convergence Research Institute, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+J%22">Lee J</searchLink>; Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Chae+WS%22">Chae WS</searchLink>; Korea Basic Science Institute (KBSI) Daegu Center, Daegu, 41566, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hwang+DK%22">Hwang DK</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+JS%22">Lee JS</searchLink>; Department of Energy Science & Engineering, Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%229885358%22">Advanced materials (Deerfield Beach, Fla.)</searchLink> [Adv Mater] 2022 Feb; Vol. 34 (8), pp. e2108412. <i>Date of Electronic Publication: </i>2022 Jan 21.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Wiley-VCH%22">Wiley-VCH </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>9885358 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1521-4095 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2209359648%22">09359648 </searchLink><i>NLM ISO Abbreviation: </i>Adv Mater <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=35019191
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        Value: 10.1002/adma.202108412
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      – TitleFull: Multilayer WSe2 /MoS2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering.
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            – D: 01
              M: 02
              Text: 2022 Feb
              Type: published
              Y: 2022
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