Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer.
Saved in:
| Title: | Control of Ni/β-Ga |
|---|---|
| Authors: | Labed M; Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra, Biskra 07000, Algeria., Sengouga N; Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra, Biskra 07000, Algeria., Rim YS; Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Korea. |
| Source: | Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2022 Mar 01; Vol. 12 (5). Date of Electronic Publication: 2022 Mar 01. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: MDPI AG Country of Publication: Switzerland NLM ID: 101610216 Publication Model: Electronic Cited Medium: Print ISSN: 2079-4991 (Print) Linking ISSN: 20794991 NLM ISO Abbreviation: Nanomaterials (Basel) Subsets: PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
|
Full text is not displayed to guests.
Login for full access.
|
|
| ISSN: | 2079-4991 |
|---|---|
| DOI: | 10.3390/nano12050827 |
