APA (7th ed.) Citation

M, L., N, S., & YS, R. (2022). Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer. Nanomaterials (Basel, Switzerland), 12(5), . https://doi.org/10.3390/nano12050827

Chicago Style (17th ed.) Citation

M, Labed, Sengouga N, and Rim YS. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer." Nanomaterials (Basel, Switzerland) 12, no. 5 (2022). https://doi.org/10.3390/nano12050827.

MLA (9th ed.) Citation

M, Labed, et al. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer." Nanomaterials (Basel, Switzerland), vol. 12, no. 5, 2022, https://doi.org/10.3390/nano12050827.