| Authors: |
Jang J; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea., Ra HS; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Ahn J; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Kim TW; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Song SH; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Korea., Park S; Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Taniguch T; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan., Watanabe K; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan., Lee K; Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea., Hwang DK; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea. |
