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Fermi-Level Pinning-Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits.

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Title: Fermi-Level Pinning-Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits.
Authors: Jang J; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea., Ra HS; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Ahn J; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Kim TW; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Song SH; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Korea., Park S; Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Taniguch T; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan., Watanabe K; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan., Lee K; Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea., Hwang DK; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.
Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 May; Vol. 34 (19), pp. e2109899. Date of Electronic Publication: 2022 Apr 04.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE
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  Data: Fermi-Level Pinning-Free WSe<subscript>2</subscript> Transistors via 2D Van der Waals Metal Contacts and Their Circuits.
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  Data: <searchLink fieldCode="AU" term="%22Jang+J%22">Jang J</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Ra+HS%22">Ra HS</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Ahn+J%22">Ahn J</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+TW%22">Kim TW</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Song+SH%22">Song SH</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Korea.<br /><searchLink fieldCode="AU" term="%22Park+S%22">Park S</searchLink>; Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Taniguch+T%22">Taniguch T</searchLink>; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan.<br /><searchLink fieldCode="AU" term="%22Watanabe+K%22">Watanabe K</searchLink>; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan.<br /><searchLink fieldCode="AU" term="%22Lee+K%22">Lee K</searchLink>; Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hwang+DK%22">Hwang DK</searchLink>; Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%229885358%22">Advanced materials (Deerfield Beach, Fla.)</searchLink> [Adv Mater] 2022 May; Vol. 34 (19), pp. e2109899. <i>Date of Electronic Publication: </i>2022 Apr 04.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Wiley-VCH%22">Wiley-VCH </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>9885358 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1521-4095 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2209359648%22">09359648 </searchLink><i>NLM ISO Abbreviation: </i>Adv Mater <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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        Value: 10.1002/adma.202109899
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              Text: 2022 May
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