Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency.
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| Title: | Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency. |
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| Authors: | Han DP; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan., Iwaya M; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan., Takeuchi T; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan., Kamiyama S; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan. |
| Source: | ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2022 Jun 08; Vol. 14 (22), pp. 26264-26270. Date of Electronic Publication: 2022 May 24. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| ISSN: | 1944-8252 |
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| DOI: | 10.1021/acsami.2c05585 |
