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Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency.

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Title: Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency.
Authors: Han DP; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan., Iwaya M; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan., Takeuchi T; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan., Kamiyama S; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2022 Jun 08; Vol. 14 (22), pp. 26264-26270. Date of Electronic Publication: 2022 May 24.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency.
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  Data: <searchLink fieldCode="AU" term="%22Han+DP%22">Han DP</searchLink>; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.<br /><searchLink fieldCode="AU" term="%22Iwaya+M%22">Iwaya M</searchLink>; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.<br /><searchLink fieldCode="AU" term="%22Takeuchi+T%22">Takeuchi T</searchLink>; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.<br /><searchLink fieldCode="AU" term="%22Kamiyama+S%22">Kamiyama S</searchLink>; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
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  Data: <searchLink fieldCode="JN" term="%22101504991%22">ACS applied materials & interfaces</searchLink> [ACS Appl Mater Interfaces] 2022 Jun 08; Vol. 14 (22), pp. 26264-26270. <i>Date of Electronic Publication: </i>2022 May 24.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101504991 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1944-8252 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219448244%22">19448244 </searchLink><i>NLM ISO Abbreviation: </i>ACS Appl Mater Interfaces <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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      – Type: doi
        Value: 10.1021/acsami.2c05585
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      – Code: eng
        Text: English
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        StartPage: 26264
    Titles:
      – TitleFull: Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency.
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            NameFull: Han DP
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            NameFull: Iwaya M
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            NameFull: Takeuchi T
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            NameFull: Kamiyama S
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            – D: 08
              M: 06
              Text: 2022 Jun 08
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              Y: 2022
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              Value: 14
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