| Authors: |
Sun X; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn.; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China., Wang D; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn., Memon MH; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn., Zhu S; State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, P. R. China., Yu H; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn., Wang H; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China., Fang S; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn., Kang Y; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn., Liu X; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn., Luo Y; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn., Zhang H; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn., Luo D; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn., Sun H; School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China. haiding@ustc.edu.cn. |
