Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells.

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Bibliographic Details
Title: Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells.
Authors: Han DP, Kim J, Shin DS, Shim JI
Source: Optics express [Opt Express] 2023 May 08; Vol. 31 (10), pp. 15779-15790.
Publication Type: Journal Article
Journal Info: Publisher: Optica Publishing Group Country of Publication: United States NLM ID: 101137103 Publication Model: Print Cited Medium: Internet ISSN: 1094-4087 (Electronic) Linking ISSN: 10944087 NLM ISO Abbreviation: Opt Express Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1094-4087
DOI:10.1364/OE.486721