| Authors: |
Kassem O; Center of Microelectronics in Provence, Department of Flexible Electronics, Mines Saint-Etienne, F-13541 Gardanne, France.; Mines Saint-Etienne, Université de Lyon, CNRS, UMR 5307 LGF, Centre SPIN, F-42023 Saint-Etienne, France., Barnier V; Mines Saint-Etienne, Université de Lyon, CNRS, UMR 5307 LGF, Centre SPIN, F-42023 Saint-Etienne, France., Nasreldin M; Center of Microelectronics in Provence, Department of Flexible Electronics, Mines Saint-Etienne, F-13541 Gardanne, France., Reslan J; Center of Microelectronics in Provence, Department of Flexible Electronics, Mines Saint-Etienne, F-13541 Gardanne, France., Aoufi A; Mines Saint-Etienne, Université de Lyon, CNRS, UMR 5307 LGF, Centre SPIN, F-42023 Saint-Etienne, France., Ravichandran A; Center of Microelectronics in Provence, Department of Flexible Electronics, Mines Saint-Etienne, F-13541 Gardanne, France., Sao-Joao S; Mines Saint-Etienne, Université de Lyon, CNRS, UMR 5307 LGF, Centre SPIN, F-42023 Saint-Etienne, France., Hoummada K; IM2NP, Faculté des Sciences de Saint-Jérôme Case 142, Aix-Marseille University/CNRS, 13397 Marseille, France., Charai A; IM2NP, Faculté des Sciences de Saint-Jérôme Case 142, Aix-Marseille University/CNRS, 13397 Marseille, France., Rieu M; Mines Saint-Etienne, Université de Lyon, CNRS, UMR 5307 LGF, Centre SPIN, F-42023 Saint-Etienne, France., Viricelle JP; Mines Saint-Etienne, Université de Lyon, CNRS, UMR 5307 LGF, Centre SPIN, F-42023 Saint-Etienne, France., Djenizian T; Center of Microelectronics in Provence, Department of Flexible Electronics, Mines Saint-Etienne, F-13541 Gardanne, France.; Center of Physical-Chemical Methods of Research and Analysis, Al-Farabi Kazakh National University, Tole Bi Street, 96A., 050040 Almaty, Kazakhstan., Mohamed S; Center of Microelectronics in Provence, Department of Flexible Electronics, Mines Saint-Etienne, F-13541 Gardanne, France. |