| Authors: |
Ho PH; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan., Cheng RH; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan., Pao PH; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan., Chou SA; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan., Huang YH; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan., Yang YY; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan., Wu YS; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan., Su YC; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan., Mao PS; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan., Su SK; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan., Chou BJ; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan., Chen E; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan., Hung TYT; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan., Li MY; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan., Cheng CC; Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan., Woon WY; Pathfinding, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan., Liao S; Pathfinding, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan., Chang WH; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan., Chien CH; Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan. |
