Author Correction: Charge disproportionate molecular redox for discrete memristive and memcapacitive switching.

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Title: Author Correction: Charge disproportionate molecular redox for discrete memristive and memcapacitive switching.
Authors: Goswami S; NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore. sreetosh@u.nus.edu.; NUS Graduate School for Integrative Science and Engineerinßg, National University of Singapore, Singapore, Singapore. sreetosh@u.nus.edu., Rath SP; School of Chemical Sciences, Indian Association for the Cultivation of Science (IACS), Kolkata, India., Thompson D; Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland. damien.thompson@ul.ie., Hedström S; Fysikum, Stockholm University, Stockholm, Sweden.; Svensk Kärnbränslehantering, Solna, Sweden., Annamalai M; NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore., Pramanick R; School of Chemical Sciences, Indian Association for the Cultivation of Science (IACS), Kolkata, India., Ilic BR; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, USA., Sarkar S; NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore.; NUS Graduate School for Integrative Science and Engineerinßg, National University of Singapore, Singapore, Singapore., Hooda S; NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore., Nijhuis CA; NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore.; Department of Chemistry, National University of Singapore, Singapore, Singapore.; Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore., Martin J; NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore. jens.martin@ikz-berlin.de.; Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore. jens.martin@ikz-berlin.de.; Department of Physics, National University of Singapore, Singapore, Singapore. jens.martin@ikz-berlin.de.; Leibniz Institut für Kristallzüchtung, Materials Science Department, Berlin, Germany. jens.martin@ikz-berlin.de., Williams RS; Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA., Goswami S; School of Chemical Sciences, Indian Association for the Cultivation of Science (IACS), Kolkata, India. icsg@iacs.res.in., Venkatesan T; NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore. Venky@nus.edu.sg.; NUS Graduate School for Integrative Science and Engineerinßg, National University of Singapore, Singapore, Singapore. Venky@nus.edu.sg.; Department of Physics, National University of Singapore, Singapore, Singapore. Venky@nus.edu.sg.; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore. Venky@nus.edu.sg.; Materials Science and Engineering Department, National University of Singapore, Singapore, Singapore. Venky@nus.edu.sg.
Source: Nature nanotechnology [Nat Nanotechnol] 2023 Sep; Vol. 18 (9), pp. 1116.
Publication Type: Published Erratum
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101283273 Publication Model: Print Cited Medium: Internet ISSN: 1748-3395 (Electronic) Linking ISSN: 17483387 NLM ISO Abbreviation: Nat Nanotechnol Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1748-3395
DOI:10.1038/s41565-023-01461-9