Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication.

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Title: Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication.
Authors: Chen W; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Wang D; Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA., Wang W; Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China., Kang Y; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Liu X; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Fang S; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Li L; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Luo Y; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Liang K; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Liu Y; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230027, P. R. China., Luo D; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Memon MH; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Yu H; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Gu W; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Liu Z; Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Chinese Academy of Sciences (CAS), Suzhou, 215123, P. R. China., Hu W; Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China., Sun H; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.; Key Laboratory of Wireless-Optical Communications, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, 230029, P. R. China.
Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Jan; Vol. 36 (1), pp. e2307779. Date of Electronic Publication: 2023 Nov 27.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 38009587
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Chen+W%22">Chen W</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Wang+D%22">Wang D</searchLink>; Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA.<br /><searchLink fieldCode="AU" term="%22Wang+W%22">Wang W</searchLink>; Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China.<br /><searchLink fieldCode="AU" term="%22Kang+Y%22">Kang Y</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Liu+X%22">Liu X</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Fang+S%22">Fang S</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Li+L%22">Li L</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Luo+Y%22">Luo Y</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Liang+K%22">Liang K</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Liu+Y%22">Liu Y</searchLink>; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230027, P. R. China.<br /><searchLink fieldCode="AU" term="%22Luo+D%22">Luo D</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Memon+MH%22">Memon MH</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Yu+H%22">Yu H</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Gu+W%22">Gu W</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Liu+Z%22">Liu Z</searchLink>; Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Chinese Academy of Sciences (CAS), Suzhou, 215123, P. R. China.<br /><searchLink fieldCode="AU" term="%22Hu+W%22">Hu W</searchLink>; Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China.<br /><searchLink fieldCode="AU" term="%22Sun+H%22">Sun H</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.; Key Laboratory of Wireless-Optical Communications, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, 230029, P. R. China.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%229885358%22">Advanced materials (Deerfield Beach, Fla.)</searchLink> [Adv Mater] 2024 Jan; Vol. 36 (1), pp. e2307779. <i>Date of Electronic Publication: </i>2023 Nov 27.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Wiley-VCH%22">Wiley-VCH </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>9885358 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1521-4095 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2209359648%22">09359648 </searchLink><i>NLM ISO Abbreviation: </i>Adv Mater <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=38009587
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1002/adma.202307779
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: e2307779
    Titles:
      – TitleFull: Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Chen W
      – PersonEntity:
          Name:
            NameFull: Wang D
      – PersonEntity:
          Name:
            NameFull: Wang W
      – PersonEntity:
          Name:
            NameFull: Kang Y
      – PersonEntity:
          Name:
            NameFull: Liu X
      – PersonEntity:
          Name:
            NameFull: Fang S
      – PersonEntity:
          Name:
            NameFull: Li L
      – PersonEntity:
          Name:
            NameFull: Luo Y
      – PersonEntity:
          Name:
            NameFull: Liang K
      – PersonEntity:
          Name:
            NameFull: Liu Y
      – PersonEntity:
          Name:
            NameFull: Luo D
      – PersonEntity:
          Name:
            NameFull: Memon MH
      – PersonEntity:
          Name:
            NameFull: Yu H
      – PersonEntity:
          Name:
            NameFull: Gu W
      – PersonEntity:
          Name:
            NameFull: Liu Z
      – PersonEntity:
          Name:
            NameFull: Hu W
      – PersonEntity:
          Name:
            NameFull: Sun H
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: 2024 Jan
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-electronic
              Value: 1521-4095
          Numbering:
            – Type: volume
              Value: 36
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Advanced materials (Deerfield Beach, Fla.)
              Type: main
ResultId 1