Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication.
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| Title: | Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication. |
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| Authors: | Chen W; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Wang D; Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA., Wang W; Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China., Kang Y; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Liu X; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Fang S; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Li L; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Luo Y; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Liang K; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Liu Y; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230027, P. R. China., Luo D; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Memon MH; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Yu H; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Gu W; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China., Liu Z; Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Chinese Academy of Sciences (CAS), Suzhou, 215123, P. R. China., Hu W; Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China., Sun H; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.; Key Laboratory of Wireless-Optical Communications, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, 230029, P. R. China. |
| Source: | Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Jan; Vol. 36 (1), pp. e2307779. Date of Electronic Publication: 2023 Nov 27. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 38009587 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Chen+W%22">Chen W</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Wang+D%22">Wang D</searchLink>; Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA.<br /><searchLink fieldCode="AU" term="%22Wang+W%22">Wang W</searchLink>; Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China.<br /><searchLink fieldCode="AU" term="%22Kang+Y%22">Kang Y</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Liu+X%22">Liu X</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Fang+S%22">Fang S</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Li+L%22">Li L</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Luo+Y%22">Luo Y</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Liang+K%22">Liang K</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Liu+Y%22">Liu Y</searchLink>; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230027, P. R. China.<br /><searchLink fieldCode="AU" term="%22Luo+D%22">Luo D</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Memon+MH%22">Memon MH</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Yu+H%22">Yu H</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Gu+W%22">Gu W</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.<br /><searchLink fieldCode="AU" term="%22Liu+Z%22">Liu Z</searchLink>; Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Chinese Academy of Sciences (CAS), Suzhou, 215123, P. R. China.<br /><searchLink fieldCode="AU" term="%22Hu+W%22">Hu W</searchLink>; Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China.<br /><searchLink fieldCode="AU" term="%22Sun+H%22">Sun H</searchLink>; School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China.; Key Laboratory of Wireless-Optical Communications, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, 230029, P. R. China. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%229885358%22">Advanced materials (Deerfield Beach, Fla.)</searchLink> [Adv Mater] 2024 Jan; Vol. 36 (1), pp. e2307779. <i>Date of Electronic Publication: </i>2023 Nov 27. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Wiley-VCH%22">Wiley-VCH </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>9885358 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1521-4095 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2209359648%22">09359648 </searchLink><i>NLM ISO Abbreviation: </i>Adv Mater <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=38009587 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/adma.202307779 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: e2307779 Titles: – TitleFull: Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen W – PersonEntity: Name: NameFull: Wang D – PersonEntity: Name: NameFull: Wang W – PersonEntity: Name: NameFull: Kang Y – PersonEntity: Name: NameFull: Liu X – PersonEntity: Name: NameFull: Fang S – PersonEntity: Name: NameFull: Li L – PersonEntity: Name: NameFull: Luo Y – PersonEntity: Name: NameFull: Liang K – PersonEntity: Name: NameFull: Liu Y – PersonEntity: Name: NameFull: Luo D – PersonEntity: Name: NameFull: Memon MH – PersonEntity: Name: NameFull: Yu H – PersonEntity: Name: NameFull: Gu W – PersonEntity: Name: NameFull: Liu Z – PersonEntity: Name: NameFull: Hu W – PersonEntity: Name: NameFull: Sun H IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: 2024 Jan Type: published Y: 2024 Identifiers: – Type: issn-electronic Value: 1521-4095 Numbering: – Type: volume Value: 36 – Type: issue Value: 1 Titles: – TitleFull: Advanced materials (Deerfield Beach, Fla.) Type: main |
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