Gate-tunable anomalous Hall effect in Bernal tetralayer graphene.
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| Title: | Gate-tunable anomalous Hall effect in Bernal tetralayer graphene. |
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| Authors: | Chen H; Department of Chemistry, National University of Singapore, Singapore, Singapore., Arora A; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore., Song JCW; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore. justinsong@ntu.edu.sg., Loh KP; Department of Chemistry, National University of Singapore, Singapore, Singapore. chmlohkp@nus.edu.sg. |
| Source: | Nature communications [Nat Commun] 2023 Dec 01; Vol. 14 (1), pp. 7925. Date of Electronic Publication: 2023 Dec 01. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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| ISSN: | 2041-1723 |
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| DOI: | 10.1038/s41467-023-43796-w |
