Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer.
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| Title: | Growth of Ga |
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| Authors: | Zheng DG; Department of Electronic and Communication, Hangzhou Dianzi University Information Engineering College, Hangzhou 311305, China., Min S; Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Gyeonggi, Republic of Korea., Kim J; Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Gyeonggi, Republic of Korea., Han DP; Department of Display & Semiconductor Engineering, School of Electrical Engineering, Pukyoung National University, Busan 48513, Republic of Korea. |
| Source: | Materials (Basel, Switzerland) [Materials (Basel)] 2023 Dec 28; Vol. 17 (1). Date of Electronic Publication: 2023 Dec 28. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print) Linking ISSN: 19961944 NLM ISO Abbreviation: Materials (Basel) Subsets: PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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| ISSN: | 1996-1944 |
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| DOI: | 10.3390/ma17010167 |
