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Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer.

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Title: Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer.
Authors: Zheng DG; Department of Electronic and Communication, Hangzhou Dianzi University Information Engineering College, Hangzhou 311305, China., Min S; Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Gyeonggi, Republic of Korea., Kim J; Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Gyeonggi, Republic of Korea., Han DP; Department of Display & Semiconductor Engineering, School of Electrical Engineering, Pukyoung National University, Busan 48513, Republic of Korea.
Source: Materials (Basel, Switzerland) [Materials (Basel)] 2023 Dec 28; Vol. 17 (1). Date of Electronic Publication: 2023 Dec 28.
Publication Type: Journal Article
Journal Info: Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print) Linking ISSN: 19961944 NLM ISO Abbreviation: Materials (Basel) Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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PubType: Academic Journal
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  Data: Growth of Ga<subscript>0.70</subscript>In<subscript>0.30</subscript>N/GaN Quantum-Wells on a ScAlMgO<subscript>4</subscript> (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer.
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  Data: <searchLink fieldCode="AU" term="%22Zheng+DG%22">Zheng DG</searchLink>; Department of Electronic and Communication, Hangzhou Dianzi University Information Engineering College, Hangzhou 311305, China.<br /><searchLink fieldCode="AU" term="%22Min+S%22">Min S</searchLink>; Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Gyeonggi, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+J%22">Kim J</searchLink>; Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Gyeonggi, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Han+DP%22">Han DP</searchLink>; Department of Display & Semiconductor Engineering, School of Electrical Engineering, Pukyoung National University, Busan 48513, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%22101555929%22">Materials (Basel, Switzerland)</searchLink> [Materials (Basel)] 2023 Dec 28; Vol. 17 (1). <i>Date of Electronic Publication: </i>2023 Dec 28.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22MDPI%22">MDPI </searchLink><i>Country of Publication: </i>Switzerland <i>NLM ID: </i>101555929 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Print <i>ISSN: </i>1996-1944 (Print) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219961944%22">19961944 </searchLink><i>NLM ISO Abbreviation: </i>Materials (Basel) <i>Subsets: </i>PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=38204021
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    Identifiers:
      – Type: doi
        Value: 10.3390/ma17010167
    Languages:
      – Code: eng
        Text: English
    Titles:
      – TitleFull: Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer.
        Type: main
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          Name:
            NameFull: Zheng DG
      – PersonEntity:
          Name:
            NameFull: Min S
      – PersonEntity:
          Name:
            NameFull: Kim J
      – PersonEntity:
          Name:
            NameFull: Han DP
    IsPartOfRelationships:
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          Dates:
            – D: 28
              M: 12
              Text: 2023 Dec 28
              Type: published
              Y: 2023
          Identifiers:
            – Type: issn-print
              Value: 1996-1944
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              Value: 17
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              Value: 1
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            – TitleFull: Materials (Basel, Switzerland)
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