Ultrahigh Photoresponsivity of W/Graphene/β-Ga2O3 Schottky Barrier Deep Ultraviolet Photodiodes.

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Title: Ultrahigh Photoresponsivity of W/Graphene/β-Ga2O3 Schottky Barrier Deep Ultraviolet Photodiodes.
Authors: Labed M; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Park BI; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Park JH; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Min JY; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Hwang HJ; Biomaterials Research Center, Korea Institution of Science and Technology, Seoul 02792, Republic of Korea., Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Rim YS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Source: ACS nano [ACS Nano] 2024 Feb 27; Vol. 18 (8), pp. 6558-6569. Date of Electronic Publication: 2024 Feb 09.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1936-086X
DOI:10.1021/acsnano.3c12415